STF18N60M2 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

fabricante

STF18N60M2

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

Electrical characteristics (curves)

Figure 7. Capacitance variations

C

(pF)

AM15841v1

1000

Ciss

100

Coss

10

1

0.1

1

Crss

10

100 VDS (V)

Figure 9. Normalized on-resistance vs temperature

RDS(on)

(norm.)

2.4

GIPG070815BQ6KLRON

VGS = 10 V

2.0

1.6

1.2

0.8

0.4

0.0

-75 -25

25

75 125 TJ (°C)

Figure 11. Normalized V(BR)DSS vs temperature

V(BR)DSS

(norm.)

1.12

GIPG070815BQ6KLBDV

ID = 1 mA

1.08

1.04

1.00

0.96

0.92

0.88

-75 -25

25

75 125 TJ (°C)

Figure 8. Normalized gate threshold voltage vs.

temperature

VGS(th)

(norm.)

1.1

GIPG070815BQ6KLVTH

ID = 250 µA

1.0

0.9

0.8

0.7

0.6

-75 -25

25

75 125 TJ (°C)

Figure 10. Source-drain diode forward characteristics

VSD(V)

AM15842v1

1.4

1.2

TJ=-50°C

1.0

0.8

0.6

TJ=150°C

TJ=25°C

0.4

0.2

0.0

0

246

8 10 12 ISD(A)

Figure 12. Output capacitance stored energy

Eoss

(µJ)

6

AM15843v1

5

4

3

2

1

0

0 100 200 300 400 500 600 VDS (V)

DS9710 - Rev 4

page 6/12

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