TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS635AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS635AB
10
100
1·0
10
1
0·1
1·0
10
IC - Collector Current - A
Figure 1.
0·1
IC = 25 A
IC = 300 mA
IC = 20 A
IC = 1 A
IC = 15 A
IC = 3 A
0·01
IC = 10 A
100
0·001
0·01
0·1
1·0
10
100
IB - Base Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS635AC
2·0
VCE = 4 V
TC = 25°C
1·8
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1·0
10
100
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3