2N5013 Ver la hoja de datos (PDF) - Solid State Devices, Inc.
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fabricante
2N5013 Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
• BVCER and BVCEO to 1000 volts
• Low Saturation Voltage
• Low Leakage at High Temperature
• High Gain, Low Saturation
• 200° C Operating, Gold Eutectic Die Attach
• 2N5010 thru 2N5012 Also Available, Contact Factory
• TX, TXV, and S-Level Screening Available
2N5013 thru 2N5015
0.5 AMP
800 – 1000 Volts
NPN Transistor
Maximum Ratings
Collector – Emitter Voltage (RBE = 1KΩ)
Collector – Base Voltage
Emitter – Base Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation @ TC = 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
CASE OUTLINE: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
2N5013
2N5014
2N5015
2N5013
2N5014
2N5015
Symbol
VCER
VCBO
VEBO
IC
IB
PD
Tj, Tstg
RθJC
Value
800
900
1000
800
900
1000
5
0.5
50
2.0
20
-65 to +200
50
Units
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043A
DOC
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