GB18N40LZ(2008_03) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

fabricante

GB18N40LZ
(Rev.:2008_03)

EAS 180 mJ - 400 V - internally clamped IGBT

STMicroelectronics 

STGD18N40LZ - STGB18N40LZ

Electrical characteristics

Figure 8.

IC (6A0)

50

Collector current vs collector

emitter voltage @ 175 °C

VGE = 8 V

HV42400

VGE = 5 V

VGE = 4.5 V

40

VGE = 4 V

30

VGE = 3.8 V

20

TC = 175 °C

10

Figure 9. Transfer characteristics

IC (3A0)

HV38710

24

18

12

TC = 25 °C

TC = 175 °C

6

TC = -40 °C

0

0

1

2

3

4

5 VCE (V)6

Figure 10. Collector emitter leakage current

vs. temperature

0

1

2

3

4 VGE (V5)

Figure 11. Normalized collector emitter

breakdown voltage vs temperature

Figure 12. Normalized gate threshold voltage Figure 13. Normalized collector emitter

vs temperature

voltage vs temperature

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