PBLS6004D Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBLS6004D Datasheet PDF : 16 Pages
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NXP Semiconductors
PBLS6004D
60 V PNP BISS loadswitch
−2.0
IC
(A)
−1.6
IB (mA) = −35.0
−31.5
−28.0
−24.5
−21.0
−1.2
−0.8
−0.4
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−17.5
−14.0
−10.5
−7.0
−3.5
103
RCEsat
(Ω)
102
10
1
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(1)
(2)
(3)
0.0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
Fig 9. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1
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VCEsat
(V)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
103
RCEsat
(Ω)
102
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−10−1
(1)
(2)
(1)
10
(2)
(3)
1
−10−2
−10−1
(3)
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBLS6004D_2
Product data sheet
Rev. 02 — 7 September 2009
© NXP B.V. 2009. All rights reserved.
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