PMBFJ309 Ver la hoja de datos (PDF) - NXP Semiconductors.

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componentes Descripción

fabricante

PMBFJ309

N-channel silicon field-effect transistors

NXP Semiconductors. 

NXP Semiconductors

PMBFJ308; PMBFJ309; PMBFJ310

N-channel silicon field-effect transistors

103

ID

(μA)

102

mcd229

10

1

10−1

10−2

10−3

−2.5

−2.0

−1.5

−1.0

−0.5

0

VGS (V)

VDS = 10 V; Tj = 25 C.

Fig 14. Drain current as a function of gate-source voltage; typical values.

−104

IGSS

(pA)

−103

mcd230

(1)

−102

(2)

−10

(3)

−1

(4)

−10−1

0

4

8

12

16

VDG (V)

Tj = 25 C.

(1) ID = 10 mA.

(2) ID = 1 mA.

(3) ID = 100 A.

(4) IGSS.

Fig 15. Gate current as a function of drain-gate voltage; typical values.

PMBFJ308_309_310

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 20 September 2011

© NXP B.V. 2011. All rights reserved.

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