PSMN7R6-60BS Ver la hoja de datos (PDF) - NXP Semiconductors.
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PSMN7R6-60BS Datasheet PDF : 14 Pages
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NXP Semiconductors
PSMN7R6-60BS
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
100
ID
(A)
80
60
40
20
0
0
003aad661
50
100
150
200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
10−1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aad700
10 μs
100 μs
DC
1 ms
10 ms
100 ms
10−2
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R6-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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