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2N2369ACSM

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Semelab - > TT Electronics plc  

SEME

LAB

2N2369ACSM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

V(BR)CEO*

V(BR)CBO

V(BR)EBO

ICES

ICBO

IEBO

VCE(sat)

VBE(sat)

hFE*

|hfe|

Cob

Cib

ts

ton

toff

Parameter

Test Conditions

Collector – Emitter Breakdown Voltage IC = 10mA

Collector – Base Breakdown Voltage IC = 10mA

Emitter – Base Breakdown Voltage IE = 10mA

VCE = 20V

Collector – Emitter Cut-off Current

VCE = 10V

Collector – Base Cut-off Current

VCB = 20V

Emitter – Base Cut-off Current

VEB = 4V

IC = 10mA

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Current Gain

IC = 30mA

IC = 100mA

IC = 10mA

IB = 1mA

IC = 30mA

IC = 100mA

IC = 10mA

IC = 30mA

IC = 10mA

Magnitude of hfe

IC = 100mA

IC = 10mA

f = 100MHz

TA = +150°C

TA = +125°C

IB = 1mA

TA = +150°C

IB = 3mA

IB = 10mA

TA = +25°C

TA = +150°C

TA = –55°C

IB = 3mA

IB = 10mA

VCE = 0.35V

VCE = 0.40V

VCE = 1V

TA = –55°C

VCE = 1V

VCE = 10V

Output Capacitance

VCB = 5V

IE = 0

f = 100kHz to 1MHz

Input Capacitance

VEB = 0.5V IC = 0

f = 100kHz to 1MHz

Storage Time

Turn–On Time

Turn–Off Time

IC = 10mA

IB1 = –IB2 = 10mA

IC = 10mA

IB1 = 3mA

IB2 = –1.5mA

Min.

15

40

4.5

0.70

0.59

40

30

40

20

20

5

Typ.

Max.

0.40

0.30

30

0.20

30

0.25

0.20

0.30

0.25

0.43

0.85

Unit

V

V

V

mA

mA

mA

V

1.02 V

0.90

1.20

120

120

—

120

120

10

—

4

pF

5

13

ns

12

ns

18

* Pulse Test: tp £ 300ms, d £ 2%.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 3/00

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