D2007 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de pieza

componentes Descripción

fabricante

D2007

METAL GATE RF SILICON FET

Semelab - > TT Electronics plc  

D2007UK

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

Drain–Source

BVDSS Breakdown Voltage

VGS = 0

ID = 10mA

65

IDSS

Zero Gate Voltage

Drain Current

VDS = 28V

VGS = 0

IGSS Gate Leakage Current

VGS(th) Gate Threshold Voltage*

gfs

Forward Transconductance*

GPS Common Source Power Gain

η

Drain Efficiency

VSWR Load Mismatch Tolerance

VGS = 20V

ID = 10mA

VDS = 10V

PO = 5W

VDS = 28V

f = 400 MHz

VDS = 0

VDS = VGS

ID = 0.4A

IDQ = 0.2A

1

0.36

13

40

20:1

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 0

VDS = 28V

VDS = 28V

VGS = –5V f = 1MHz

VGS = 0 f = 1MHz

VGS = 0 f = 1MHz

Typ.

Max. Unit

V

2

mA

1

µA

7

V

S

dB

%

—

20

pF

11

pF

1

pF

* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

RTHj–case

Thermal Resistance Junction – Case

Max. 6.0°C / W

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/98

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