EDI9F416128LP85BNC(2002) Ver la hoja de datos (PDF) - White Electronic Designs => Micro Semi

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componentes Descripción

fabricante

EDI9F416128LP85BNC
(Rev.:2002)

4x128Kx16 Static RAM CMOS, Module

White Electronic Designs => Micro Semi 

EDI9F416128C

FIG. 5

WRITE CYCLE 2 - E CONTROLLED

A

TAVEL

E

W

D

Q

9F416128C Write Cyc2

TAVAV

TELEH

TAVEH

TWLEH

TEHAX

HIGH Z

TDVEH

TEHDX

DATA VALID

DATA RETENTION CHARACTERISTICS

Characteristic

Data Retention Voltage

Data Retention Quiescent Current

Sym

VDD

ICCDR

Chip Disable to Data Retention Time(1) TCDR

Operation Recovery Time (1)

TR

Test Conditions VDD Min Typ

VDD = 0.2V

2

--

E ž VDD -0.2V

2V

--

1

VIN ž VDD -0.2V 3V

--

1

or VIN ­ 0.2V

0

--

5

--

Max

Unit

V

6

µA

8

µA

--

ns

--

ms

FIG. 6

DATA RETENTION - E CONTROLLED

VCC

E

DATA RETENTION MODE

4.5V

VDD

4.5V

TCDR

TR

E ≥ VDD-0.2V

9F416128C Data Retent.

Aug. 2002 Rev. 2A

ECO #15521

5

White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

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