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CMPD5001
(Rev.:2010)

SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE

Central Semiconductor 

CMPD5001

CMPD5001S

SURFACE MOUNT

HIGH CURRENT

INDUCTIVE LOAD

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD5001 series

types are silicon switching diodes manufactured by

the epitaxial planar process, designed for switching

applications requiring extremely high current capability.

SOT-23 CASE

The following configurations are available:

CMPD5001

CMPD5001S

SINGLE

DUAL, IN SERIES

MARKING CODE: DA2

MARKING CODE: D49

MAXIMUM RATINGS: (TA=25°C)

Continuous Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Repetitive Reverse Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VR

IF

IFRM

IRRM

IFSM

IFSM

PD

TJ, Tstg

ΘJA

120

400

800

600

6.0

1.5

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

MAX

IR

VR=90V

100

IR

VR=90V, TA=150°C

100

BVR

IR=50μA

120

325

VF

IF=10mA

0.75

VF

IF=50mA

0.84

VF

IF=100mA

0.90

VF

IF=200mA

1.00

VF

IF=400mA

1.25

CT

VR=0, f=1.0MHz

35

trr

IR=IF=30mA, Irr=3.0mA, RL=100Ω

60

trr

IR=IF=10mA, Irr=3.0mA, RL=100Ω

50

UNITS

V

mA

mA

mA

A

A

mW

°C

°C/W

UNITS

nA

μA

V

V

V

V

V

V

pF

ns

ns

R4 (25-January 2010)

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