TN1A80 Ver la hoja de datos (PDF) - Apollo Electron Co., Ltd.

Número de pieza

componentes Descripción

fabricante

TN1A80

Triacs

Apollo Electron Co., Ltd. 

TN1A80

Electrical Characteristics (Tj =25°C unless otherwise specified)

Symbol

Items

IDRM

Repetitive Peak Off-State

Current

VTM

I+GT1

I

-

GT1

I

-

GT3

I+GT3

V+GT1

V-GT1

V-GT3

V+GT3

VGD

dv/dt

IH

Peak On-State Voltage

I

II

Gate Trigger Current

III

IV

I

,,

Gate Trigger Voltage

III

IV

Non-Trigger Gate Voltage

Critical Rate of Rise Off-State

Voltage

Holding Current

Conditions

VD = VDRM, Single Phase, Half Wave

Ratings

Unit

Min. Typ. Max.

-

-

0.5

mA

ITM = 1 A, tp=380㎲

VD = 12V, RL=100 Ω

VD = 12V, RL=100 Ω

VD=1/2 VDRM

Tj = 110 °C

VD=2/3 VDRM

VD=12V, IT=0.1A

­

-

1.6

V

-

-

10

-

-

10

mA

-

-

10

-

-

30

-

-

1.8

-

-

1.8

V

-

-

1.8

-

-

2.0

0.1

-

-

V

5

-

-

V/㎲

-

­

25

mA

2/6

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