US5U29 Ver la hoja de datos (PDF) - ROHM Semiconductor
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fabricante
US5U29 Datasheet PDF : 5 Pages
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Transistor
zElectrical characteristic curves
10
VDS=−10V
Pulsed
1
Ta=125°C
75°C
25°C
−20°C
0.1
0.01
10000
1000 Ta=125°C
75°C
25°C
−20°C
US5U29
VGS=−4.5V
Pulsed
10000
1000 Ta=125°C
75°C
25°C
−20°C
VGS=−4V
Pulsed
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Gate−Source Voltage : VGS[V]
Fig.1 Typical Transfer Characteristics
100
0.01
0.1
1
10
Drain Current : −ID[A]
Fig.2 Static Drain−Source On−State
Resistance vs.Drain Current ( Ι )
100
0.01
0.1
1
10
Drain Current : −ID[A]
Fig.3 Static Drain−Source On−State
Resistance vs.Drain Current ( ΙΙ )
10000
Ta=125°C
75°C
25°C
1000
−20°C
VGS=−2.5V
Pulsed
1000
750
500
250
ID=−0.5A
−1A
Ta=25°C
Pulsed
10000
1000 VGS=−2.5V
−4.0V
−4.5V
Ta=25 C
Pulsed
100
0.01
0.1
1
10
Drain Current : −ID[A]
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current ( ΙΙΙ )
0
0
2
4
6
8 10 12
Gate−Source Voltage : −VGS[V]
Fig.5 Static Drain−Source On−State
Resistance vs.Gate−Source Voltage
100
0.01
0.1
1
10
Drain Current : −ID[A]
Fig.6 Static Drain−Source On−State
Resistance vs.Drain Current
10
1 Ta=125°C
75°C
25°C
−20°C
0.1
VGS=0V
Pulsed
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source−Drain Voltage : −VSD[V]
Fig.7 Reverse Drain Current
vs. Source-Drain Current
1000
Ta=25 C
10000
Ta=25°C
f=1MHZ
VDD=−15V
VGS=0V
VGS=−4.5V
RG=10Ω
1000
Pulsed
Ciss
100
Crss
Coss
10
0.01
0.1
1
10
100
Drain−Source Voltage : −VDS[V]
Fig.8 Typical Capactitance
vs.Drain−Source Voltage
tf
100
td(off)
10
td(on)
tr
1
0.01
0.1
1
10
Drain Current : −ID[A]
Fig.9 Switching Characteristics
Rev.C
3/4
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