UPA835 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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UPA835

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

NEC => Renesas Technology 

µPA835TC

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Ratings

Parameter

Symbol

Unit

Q1

Q2

Collector to Base Voltage

VCBO

9

20

V

Collector to Emitter Voltage

VCEO

6

12

V

Emitter to Base Voltage

VEBO

2

3

V

Collector Current

Total Power Dissipation

IC

P Note

T

30

180 in 1 element

100

mA

200 in 1 element

mW

230 in 2 elements

Junction Temperature

Tj

Storage Temperature

Tstg

150

150

°C

−65 to +150

°C

Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.

ELECTRICAL CHARACTERISTICS (TA = +25°C)

(1) Q1

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Feedback Capacitance

Insertion Power Gain

Noise Figure

Symbol

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

Conditions

VCB = 5 V, IE = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 10 mANote 1

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCB = 3 V, IE = 0, f = 1 MHzNote 2

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCE = 3 V, IC = 3 mA, f = 2 GHz

MIN.

−

−

75

10.0

−

7.0

−

TYP.

−

−

−

12.0

0.4

8.5

1.5

MAX.

0.1

0.1

150

−

0.7

−

2.5

Unit

µA

µA

GHz

pF

dB

dB

Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

2

Data Sheet P14555EJ1V0DS00

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