SI3446DV Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3446DV Datasheet PDF : 5 Pages
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Si3446DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 5, 4.5, 4, 3.5, 3 V
16
16
2.5 V
12
12
Transfer Characteristics
8
4
0
0
0.10
2V
1, 1.5 V
1
2
3
4
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
4
TC = 125_C
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
1500
Capacitance
0.08
0.06
0.04
VGS = 2.5 V
VGS = 4.5 V
0.02
0.00
0
4
8
12
16
20
ID – Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 5.3 A
4
1200
Ciss
900
600
Coss
300
Crss
0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 5.3 A
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
Qg – Total Gate Charge (nC)
0.6
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
Document Number: 70715
S-51451—Rev. C, 01-Aug-05
www.vishay.com
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