SH8K1 Ver la hoja de datos (PDF) - ROHM Semiconductor
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SH8K1 Datasheet PDF : 4 Pages
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SH8K1
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
−
Zero gate voltage drain current IDSS
−
−
−
V ID=1mA, VGS=0V
1
μA VDS=30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS=10V, ID=1mA
−
Static drain-source on-state
resistance
RDS
∗
(on)
−
−
36 51
ID=5.0A, VGS=10V
52 73 mΩ ID=5.0A, VGS=4.5V
58 82
ID=5.0A, VGS=4V
Forward transfer admittance
Yfs ∗ 3.0
−
−
S ID=5.0A, VDS=10V
Input capacitance
Ciss
− 230 −
pF VDS=10V
Output capacitance
Coss
−
80
−
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ∗
−
Rise time
tr ∗ −
Turn-off delay time
td (off) ∗
−
Fall time
tf ∗ −
Total gate charge
Qg ∗ −
Gate-source charge
Qgs ∗ −
Gate-drain charge
Qgd ∗ −
∗Pulsed
50 − pF f=1MHz
6
−
ns ID=2.5A, VDD 15V
8
−
ns VGS=10V
22
−
ns RL=6Ω
5
−
ns RG =10Ω
3.9 5.5 nC VDD 15V
1.1 − nC VGS=5V
1.4 − nC ID=5.0A
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
−
1.2
V IS=6.4A, VGS=0V
Data Sheet
www.rohm.com
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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