NIS5101E2T1(2006) Ver la hoja de datos (PDF) - ON Semiconductor
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NIS5101E2T1 Datasheet PDF : 12 Pages
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NIS5101
TYPICAL PERFORMANCE CURVES
(TA = 25°C unless otherwise noted)
100
10
Short Circuit −40°C
1
Short Circuit 25°C
Short Circuit 120°C
Overload −40°C
Overload 25°C
Overload 120°C
0.1
1
10
100
Rext_ILimit (W)
1000
Figure 2. Current Limit Adjustment
(For Main/Mirror MOSFET Current Ratio explanation,
see page 11)
100
90
Turn−Off 25°C
80
70
60
Turn−On 25°C
50
40
30
20
10
100
1000
OVLO_Rext (kW)
Figure 4. OVLO Adjustment, TJ = 255C
45
Turn−On −40°C
40
Turn−On 25°C
Turn−On 120°C
35
30
25
Turn−Off −40°C
20
Turn−Off 25°C
Turn−Off 120°C
15
10
100
1000
UVLO_Rext (kW)
Figure 3. UVLO Adjustment
100
90
Turn−Off 120°C
80
70
60
Turn−On 120°C
50
40
30
20
10
100
1000
OVLO_Rext (kW)
Figure 5. OVLO Adjustment, TJ = 1205C
100
90
Turn−Off −40°C
80
70
60
Turn−On −40°C
50
40
30
20
10
100
1000
OVLO_Rext (kW)
Figure 6. OVLO Adjustment, TJ = −405C
115
105
95
0.5 in2 Cu area
1 in2 Cu area
85
2 in2 Cu area
75
65
55
45
35
Device Reaching
Thermal Shutdown
25
1
2
3
4
5
6
7
CONTINUOUS CURRENT (A)
Figure 7. Continuous Current vs. Case Temperature
(Test performed on a double sided copper board, 1 oz)
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4
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