MMJT9410G Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
fabricante
MMJT9410G Datasheet PDF : 5 Pages
| |||
MMJT9410
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
Typ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 mAdc, IB = 0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IE = 50 mAdc, IC = 0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VBE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 1)
VCEO(sus)
30
VEBO
6.0
ICER
−
−
IEBO
−
Vdc
−
−
Vdc
−
−
mAdc
−
20
−
200
mAdc
−
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 3.0 Adc, IB = 0.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 3.0 Adc, IB = 0.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.2 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.2 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 3.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
hFE
Vdc
−
0.105
0.150
−
0.150
0.200
−
−
0.450
Vdc
−
−
1.25
Vdc
−
−
1.10
−
85
200
−
80
−
−
60
−
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Input Capacitance
(VEB = 8.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current−Gain − Bandwidth Product (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz)
Cob
pF
−
85
135
Cib
pF
−
200
−
fT
MHz
−
72
−
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| • ftest
1.0
0.25
0.20
0.75
0.50
0.8 A
0.25
0.5 A
0.25 A
0
1.0
IC = 3.0 A
1.2 A
10
100
IB, BASE CURRENT (mA)
0.15
1.2 A
0.10
0.8 A
0.05
0.5 A
IC = 0.25 A
0
1000
1.0
10
100
1000
IB, BASE CURRENT (mA)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
http://onsemi.com
2
Share Link: 