MGFC39V3436 Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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MGFC39V3436 Datasheet PDF : 2 Pages
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TYPICAL CHARACTERISTICS (Ta=25deg.C)
P1dB,GLP vs. f
38
VDS=10(V)
IDS=1.2(A)
P1dB
37
36
35
GLP
34
33
32
3.3
3.4
3.5
3.6
FREQUENCY f(GHz)
17
16
15
14
13
12
11
3.7
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
40
VDS=10(V)
38 IDS=1.2(A)
f=3.5(GHz)
36
Po,PAE vs. Pin
Po
34
32
30
PAE
28
26
24
22
20
10
15
20
25
30
INPUT POWER Pin (dBm)
100
90
80
70
60
50
40
30
20
10
0
35
Po,IM3 vs Pin
33
10
VDS=10(V)
IDS=1.2(A)
31 f=3.6GHz
0
Delta f=5(MHz)
Po
29
-10
27
-20
PAE
25
-30
23
-40
21
-50
19
7
-60
9 11 13 15 17 19 21
INPUT POWER Pin(dBm S.C.L.)
S parameters ( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
S-Parameters (TYP.)
f
S11
S21
(GHz)
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
Magn.
0.48
0.49
0.49
0.49
0.48
0.46
0.43
0.38
0.36
Angle(deg)
-179
166
159
145
133
126
112
98
88
Magn.
4.148
4.146
4.127
4.111
4.119
4.123
4.079
4.072
4.049
Angle(deg)
29
16
9
-4
-17
-24
-37
-51
-59
Magn.
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
S12
Angle(deg)
-38
-52
-58
-70
-79
-85
-97
-113
-118
MITSUBISHI
ELECTRIC
Magn.
0.28
0.29
0.29
0.30
0.31
0.32
0.33
0.33
0.33
S22
Angle(deg)
-136
-150
-157
-170
178
171
158
145
140
18-Sep-'98
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