IRFP27N60KPBF(2011) Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFP27N60KPBF Datasheet PDF : 10 Pages
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IRFP27N60K, SiHFP27N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.29
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 16 Ab
VDS = 50 V, ID = 16 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VGS = 0 V
VDS = 480 V , f = 1.0 MHz
VGS = 0 V
VDS = 0 V to 480 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = 27 A, VDS = 480 V
Qgs
VGS = 10 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VDD = 300 V, ID = 27 A
Rg = 4.3 , VGS = 10 V, see fig. 10b
MIN.
600
-
3.0
-
-
-
-
14
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
640
- mV/°C
-
5.0
V
-
± 100 nA
-
50
μA
-
250
0.18 0.22
-
-
S
4660
-
460
-
41
-
pF
5490
-
120
-
250
-
-
180
-
56
nC
-
86
27
-
110
-
ns
43
-
38
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
27
A
-
-
110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 27 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
-
620
920
ns
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 27 A, dI/dt = 100 A/μsb
-
11
16
μC
Reverse Recovery Current
IRRM
-
36
53
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.
www.vishay.com
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Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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