HYB3164805J Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
fabricante
HYB3164805J Datasheet PDF : 32 Pages
| |||
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
CAS to output in low-Z
tCLZ
0
–
0
–
Output buffer turn-off delay
tOFF
0
13
0
15
Output buffer turn-off delay from OE
tOEZ
0
13
0
15
Data to CAS low delay
tDZC
0
–
0
–
Data to OE low delay
tDZO
0
–
0
–
CAS high to data delay
tCDD
13
–
15
–
OE high to data delay
tODD
13
–
15
–
Unit Note
ns 8
ns 12
ns 12
ns 13
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
tWCH
8
–
10
–
tWP
7
–
10
–
tWCS
0
–
0
–
tRWL
8
–
10
–
tCWL
8
–
10
–
tDS
0
–
0
–
tDH
7
–
10
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
Read-modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
tRWC
tRWD
tCWD
tAWD
tOEH
111 –
67
–
30
–
42
–
7
–
135 –
79
–
34
–
49
–
10
–
ns
ns 15
ns 15
ns 15
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
tHPC
20
CAS precharge time
tCP
8
Access time from CAS precharge
tCPA
–
Output data hold time
tCOH
5
RAS pulse width in hyper page mode tRAS
50
–
25
–
10
27
–
–
5
200k 60
–
–
35
–
200k
ns
ns
ns 7
ns
ns
Semiconductor Group
158
Share Link: 