FQPF5N60 Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
Número de pieza
componentes Descripción
fabricante
FQPF5N60 Datasheet PDF : 7 Pages
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101
VGS
Top : 15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
5
V = 10V
4
GS
V = 20V
GS
3
2
1
※ Note : T = 25℃
J
0
0
2
4
6
8
10
12
14
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
C
iss
C
600
oss
400
※ Notes :
1. VGS = 0 V
C
2. f = 1 MHz
rss
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150℃
100
25℃
-55℃
10-1
2
※ Notes :
1. V = 50V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 120V
10
V = 300V
DS
V = 480V
DS
8
6
4
2
※ Note : ID = 5.0 A
0
0
3
6
9
12
15
18
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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