FES16BT Ver la hoja de datos (PDF) - General Semiconductor
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FES16BT Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTICS CURVES FES16AT THRU FES16JT
FIG. 1 - FORWARD CURRENT DERATING CURVE
20
RESISTIVE OR INDUCTIVE LOAD
16
12
8.0
4.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
250
TC=100°C
200
150
100
50
0
0
50
100
150
CASE TEMPERATURE, °C
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
80
TJ =125°C
10
50-200V
300-400V
500-600V
1
0.1
0.2
TJ = 25°C
PULSE WIDTH = 300µs
1% DUTY CYCLE
0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1,000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
1,000
100
TJ=25°C
10
TJ =100°C
1
50-200V
300-600V
TJ=25°C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
10
0.1
50-400V
500-600V
1
10
100
REVERSE VOLTAGE, VOLTS
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