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DTC114TE

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Preliminary Data Sheet

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base resistor and a

base–emitter resistor. These digital transistors are designed to replace a single

device and its external resistor bias network. The BRT eliminates these

individual components by integrating them into a single device. The DTC114TE

is housed in the SOT–416/SC–90 package which is ideal for low power surface

mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.

DTC114TE

3

2

1

CASE 463–01, STYLE 1

SOT–416/SC–90

R1

IN (1)

R1 = 10 kΩ

OUT (3)

GND (2)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Collector–Base Voltage

Collector–Emitter Voltage

Collector Current

DEVICE MARKING

VCBO

50

VCEO

50

IC

100

DTC114TE = 94

THERMAL CHARACTERISTICS

Power Dissipation @ TA = 25°C(1)

Operating and Storage Temperature Range

Junction Temperature

PD

TJ, Tstg

TJ

*125

– 55 to +150

150

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Min

Typ

Max

Collector–Base Breakdown Voltage (IC = 50 µAdc)

V(BR)CBO

50

—

—

Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc)

V(BR)CEO

50

—

—

Emitter–Base Breakdown Voltage (IE = 50 µAdc)

V(BR)EBO

5.0

—

—

Collector–Base Cutoff Current (VCB = 50 Vdc)

ICBO

—

—

500

Emitter–Base Cutoff Current (VEB = 4.0 Vdc)

IEBO

—

—

500

DC Current Gain (IC = 1.0 mAdc, VCE = 5 Vdc)

hFE

100

300

600

Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

—

—

0.3

Input Resistance

R1

7.0

10

13

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.

* Typical electrical characteristic curves are not available at this time.

Unit

Vdc

Vdc

mAdc

mW

°C

°C

Unit

Vdc

Vdc

Vdc

nAdc

nAdc

—

Vdc

kOhms

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Thermal Clad is a trademark of the Bergquist Company

©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data

1

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