BSV52 Ver la hoja de datos (PDF) - Diotec Semiconductor Germany

Número de pieza

componentes Descripción

fabricante

BSV52

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

Switching Transistors

BSV 52

Characteristics (Tj = 25/C)

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 10 mA, IB = 1 mA

VBEsat

IC = 50 mA, IB = 5 mA

VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 1 V, IC = 1 mA

hFE

VCE = 1 V, IC = 10 mA

hFE

VCE = 1 V, IC = 50 mA

hFE

Gain-Bandwidth Product – Transitfrequenz

VCE = 10 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 5 V, IE = ie = 0, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 1 V, IC = ic = 0, f = 1 MHz

CEB0

Switching times – Schaltzeiten

turn-on time

ton

delay time

rise time

turn-off time

storage time

td

ICon = 10 mA

IBon = 3 mA

- IBoff = 1.5 mA

tr

toff

ts

fall time

tf

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

700 mV

–

850 mV

–

–

1.2 V

25

–

–

40

–

120

25

–

–

400 MHz 500 MHz

–

–

–

4 pF

–

–

4.5 pF

–

–

10 ns

–

–

4 ns

–

–

6 ns

–

–

20 ns

–

–

10 ns

–

–

10 ns

RthA

420 K/W 2)

Marking - Stempelung

BSV 52 = B2

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

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