BSN20 Ver la hoja de datos (PDF) - Diodes Incorporated.
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BSN20 Datasheet PDF : 6 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
@ TSP = +25°C (Note 6)
Steady
State
TA = +25°C
TA = +100°C
Pulsed Drain Current @ TSP = +25°C (Notes 6 & 7)
Symbol
VDSS
VGSS
ID
IDM
Value
50
20
500
300
1.2
BSN20
Units
V
V
mA
A
Thermal Characteristics
Characteristic
Power Dissipation, @TA = +25°C (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation, @TSP = +25°C (Note 6)
Thermal Resistance, @TSP = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJSP
TJ, TSTG
.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Source (diode forward) Current
Peak Source (diode forward) Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
IS
ISM
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
50
0.4
40
Typ
1.0
1.3
1.6
320
1.0
21.8
5.6
3.3
49
800
100
100
2.93
2.99
9.45
8.3
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
Max
0.5
100
1.5
1.8
2.0
1.5
194
1.2
40
15
10
Value
600
200
920
136
-55 to +150
Units
mW
C/W
mW
°C/W
°C
Unit
Test Condition
V
VGS = 0V, ID = 250µA
µA
VDS = 50V, VGS = 0V
nA VGS = 20V, VDS = 0V
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 0.22A
VGS = 4.5V, ID = 0.1A
mS VDS = 10V, ID = 0.1A
V
VGS = 0V, IS = 180mA
mA TSP = +25°C
A
TSP = +25°C (Notes 3 & 4)
pF
pF VDS = 10V, VGS = 0V, f = 1.0MHz
pF
VDS =0V, VGS = 0V, f = 1MHz
pC
pC
VGS = 10V, VDD = 25V,
ID = 250mA
pC
ns
ns
VDD = 30V, VGEN = 10V,
ns
RL = 150, RGEN = 50,
ID = 0.2A
ns
BSN20
Document number: DS31898 Rev. 8 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
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