BCW60(2007) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

BCW60
(Rev.:2007)

NPN Silicon AF Transistors

Infineon Technologies 

BCW60, BCX70

DC current gain hFE = ƒ(IC)

VCE = 5 V

10 3 BCW 60/BCX 70

h FE 5 100 ˚C

25 ˚C

102 -50 ˚C

5

EHP00334

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

10 2 BCW 60/BCX 70

Ι C mA

10 1

5

100 ˚C

25 ˚C

-50 ˚C

EHP00332

10 1

10 0

5

5

10 0

10 -2

10 -1

10 0

10 1 mA 10 2

ΙC

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 40

10 -1

0

0.1 0.2 0.3

Collector current IC = ƒ(VBE)

VCE = 5V

0.4 V 0.5

V CEsat

10 2 BCW 60/BCX 70

Ι C mA

10 1

100 ˚C

25 ˚C

-50 ˚C

5

10 0

5

EHP00331

10 2 BCW 60/BCX 70

mA

ΙC

10 1

5

10 0

5

100 ˚C

10 -1

5

EHP00333

25 ˚C -50 ˚C

10 -1

0

0.2 0.4 0.6 0.8 V 1.2

V BE sat

10 -2

0

0.5

V

1.0

V BE

6

2007-04-20

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