BC849 Ver la hoja de datos (PDF) - KEXIN Industrial
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fabricante
BC849 Datasheet PDF : 3 Pages
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SMD Type
NPN Transistors
BC849~BC850 (KC849~KC850)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage BC849
BC850
Collector- emitter breakdown voltage BC849
BC850
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Voltage
DC current gain
BC849B,BC850B
BC849C,BC850C
DC current gain
BC849B,BC850B
BC849C,BC850C
Collector capacitance
Emitter capacitance
Noise Figure
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE
IE= 100μA， IC= 0
VCB= 30 V , IE= 0
VCB= 30 V , IE= 0,TJ=150℃
VEB= 5V , IC=0
IC=10 mA, IB=0.5mA (Note.1)
IC=100 mA, IB=5mA (Note.1)
IC=10 mA, IB=0.5mA (Note.2)
IC=100 mA, IB=5mA (Note.2)
IC=2 mA, VCE=5V (Note.2)
IC=10 mA, VCE=5V (Note.2)
VCE= 5V, IC= 10uA
hFE
VCE= 5V, IC= 2mA
Cc VCB= 10V, IC=ic= 0,f=1MHz
Ce VEB = 0.5V , IE=ie= 0,f=1MHz
IC=200uA,VCE=5V,RS=2KΩ;
f=10Hz to 15.7KHz
NF
IC=200uA,VCE=5V,RS=2KΩ;
f=1KHz,B=200Hz
fT
VCE= 5V, IC= 10mA,f=100MHz
Note.1: VBEsat decreases by about 1.7 mV/K with increasing temperature.
Note.2: VBE decreases by about 2 mV/K with increasing temperature.
■ Classification of hfe
Type
Range
Marking
BC849B
200-450
2B*
BC849C
420-800
2C*
BC850B
200-450
2F*
BC850C
420-800
2G*
Transistors
Min Typ Max Unit
30
50
30
V
45
5
15 nA
5
uA
100 nA
90 250
200 500
700
mV
900
580 660 700
770
240
450
200 290 450
420 520 800
2.5
pF
11
4
dB
4
100
MHz
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