BC556 Ver la hoja de datos (PDF) - ON Semiconductor

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BC556

Low Noise Transistors

ON Semiconductor 

BC556B, BC557A, B, C, BC558B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = −100 mAdc)

Emitter −Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

Collector−Emitter Leakage Current

(VCES = −40 V)

(VCES = −20 V)

(VCES = −20 V, TA = 125°C)

BC556

BC557

BC558

BC556

BC557

BC558

BC556

BC557

BC558

BC556

BC557

BC558

BC556

BC557

BC558

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICES

−65

−45

−30

−80

−50

−30

−5.0

−5.0

−5.0

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−2.0

−2.0

−2.0

−

−

−

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −5.0 V)

(IC = −2.0 mAdc, VCE = −5.0 V)

(IC = −100 mAdc, VCE = −5.0 V)

hFE

A Series Device

B Series Devices

C Series Devices

BC557

A Series Device

B Series Devices

C Series Devices

A Series Device

B Series Devices

C Series Devices

−

90

−

150

−

270

120

−

120

170

180

290

420

500

−

120

−

180

−

300

Collector −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −10 mAdc, IB = see Note 1)

(IC = −100 mAdc, IB = −5.0 mAdc)

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −100 mAdc, IB = −5.0 mAdc)

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

VCE(sat)

VBE(sat)

VBE(on)

−

−

−

−

−

−0.55

−

−0.075

−0.3

−0.25

−0.7

−1.0

−0.62

−0.7

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)

fT

BC556

BC557

BC558

−

280

−

320

−

360

Output Capacitance

(VCB = −10 V, IC = 0, f = 1.0 MHz)

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 V,

RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)

Cob

NF

BC556

BC557

BC558

−

3.0

−

2.0

−

2.0

−

2.0

Small−Signal Current Gain

(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

hfe

BC557

A Series Device

B Series Devices

C Series Devices

125

−

125

−

240

−

450

−

1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.

Max

−

−

−

−

−

−

−

−

−

−100

−100

−100

−4.0

−4.0

−4.0

−

−

−

800

220

460

800

−

−

−

−0.3

−0.6

−0.65

−

−

−0.7

−0.82

−

−

−

6.0

10

10

10

900

260

500

900

Unit

V

V

V

nA

mA

−

V

V

V

MHz

pF

dB

−

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