BC547 Ver la hoja de datos (PDF) - Unspecified

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fabricante

BC547

NPN Epitaxial Silicon Transistor

Unspecified 

Switching and Applications

High voltage: BC546, VCEO=65V

Low Noise:BC549,BC550

Complement to BC556…BC560

BC546/547/548/549/550

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25℃ unless otherwise noted

Symbol

VCBO

Parameter

Collector-Base Voltage

:BC546

:BC547/550

:BC548/549

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Emitter Voltage: BC546

:BC547/550

:BC548/549

Emitter-Base Voltage :BC546/547

:BC548/549/550

:BC548/549

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

Electrical Characterististics Ta=25℃ unless otherwise noted

Symbol Parameter

Test Condition

ICBO

hFE

VCE(sat)

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

fT

Current Gain Bandwidth Product

Cob

Output Capacitance

Cib

Input Capacitance

NF

Noise Figure : BC546/547/548

:BC549/550

:BC549

:BC550

VCB=30V, IE=0

VCE=5V, IC=2mA

Ic=10mA, IB=0.5mA

IC=100mA, IB=5mA

Ic=10mA, IB=0.5mA

IC=100mA, IB=5mA

VCE=5V, Ic=2mA

VCE=5V, IC=10mA

VCE=5V, IC=10mA, f=100MHz

VCB=0.5V, IC=0, f=1MHz

VEB=0.5V, Ic=0,f=1MHz

VCE=5V, Ic=200µA

f=1KHz,RG=2k Ω

VCE=5V, IC=200µA

RG=2k Ω, f=30~15000MHz

hFE Classification

Classification

hFE

www.artschip.com

A

110~220

B

200~450

1

Value

80

50

30

65

45

30

65

45

30

100

500

150

-65~150

Units

V

V

V

V

V

V

V

V

V

mA

mW

℃

℃

Min.

110

580

Typ.

90

200

700

900

660

300

3.5

9

2

1.2

1.4

1.4

Max.

15

800

250

600

700

720

6

10

4

4

3

Units

nA

mV

mV

mV

mV

mV

mV

MHz

pF

pF

dB

dB

dB

dB

C

420~800

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