3SK298ZP Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
fabricante
3SK298ZP Datasheet PDF : 9 Pages
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3SK298
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
16 2.5 V
2.0 V
1.5 V
VDS = 6 V
Pulse test
12
8
1.0 V
4
VG2S = 0.5 V
0
1
2
3
4
5
Gate1 to source voltage VG1S (V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
VDS = 6 V
f = 1 kHz
24
VG2S = 3.0 V
18
2.5 V
12
2.0 V
1.5 V
6
1.0 V
0.5 V
0
0.4 0.8 1.2 1.6 2.0
Gate1 to source voltage VG1S (V)
Typical Output Characteristics
20
VG2S = 3 V
1.4 V
Pulse test
16
1.2 V
12
1.0 V
8
0.8 V
0.6 V
4
VG1S = 0.4 V
0
2
4
6
8 10
Drain to source voltage VDS (V)
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
VDS = 6 V
16
2.5 V
2.0 V
1.5 V
Pulse test
12
1.0 V
8
4
VG1S = 0.5 V
0
1
2
3
4
5
Gate2 to source voltage VG2S (V)
Power Gain vs. Drain Current
30
24
18
12
6
0
1
2
VDS = 6 V
VG2S = 3 V
f = 200 MHz
5
10
20
Drain current ID (mA)
Rev.3.00 Aug 10, 2005 page 3 of 8
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