2SD1664-Q-AB3-R Ver la hoja de datos (PDF) - Unisonic Technologies

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2SD1664-Q-AB3-R

MEDIUM POWER NPN TRANSISTOR

Unisonic Technologies 

2SD1664

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

32

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

DC

1

A

Collector Current (Duty=1/2, PW=20ms)

Pulse

IC

2

A

Collector Power Dissipation

PC

0.5

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Output Capacitance

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(SAT)

fT

Cob

TEST CONDITIONS

IC= 50μA

IC= 1mA

IE=50μA

VCB=20V

VEB= 4V

VCE= 3V, Ic= 100mA

IC/IB=500mA /50mA

VCE=5V, IE=-50mA, f=100MHz

VCB= 10V, IE= 0A, f=1MHz

„ CLASSIFICATION OF hFE

RANK

RANGE

P

82-180

Q

120-270

MIN TYP MAX UNIT

40

V

32

V

5

V

0.5 μA

0.5 μA

82

390

0.15 0.4

V

150

MHz

15

pF

R

180-390

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R208-025.C

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