2SD1409 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic
Número de pieza
componentes Descripción
fabricante
2SD1409 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1409
DESCRIPTION
·With TO-220F package
·High DC current gain
·Monolithic construction with built-in base-emitter
shunt resistor
APPLICATIONS
·Igniter applications
·High volitage switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Ta=25℃
VALUE
600
400
5
6
1
25
2.0
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
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