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2SB649

PNP Type Plastic Encapsulate Transistors

Secos Corporation. 

Elektronische Bauelemente

2SB649/2SB649A

PNP Type

Plastic Encapsulate Transistors

Maximum Collector Dissipation

Curve

30

20

10

0

50

100

150

Case temperature TC (°C)

Typical Output Characteristics

–1.0

–0.8

–––5–44.03..50.5

–3.0

TC = 25°C

–2.5

–0.6

–2.0

–1.5

–0.4

–1.0

–0.2

–0.5 mA

IB = 0

0

–10 –20 –30 –40 –50

Collector to emitter voltage VCE (V)

DC Current Transfer Ratio

vs. Collector Current

350

VCE = –5V

350

Ta = 75°C

250

25°C

200

150

–25°C

100

50

0

–1

–10

–100 –1,000

Collector current IC (mA)

–3

–1.0

ICmax

Area of Safe Operation

(–13.3 V, –1.5 A)

(–40 V, –0.5 A)

–0.3

–0.1

DC Operation (TC = 25°C)

–0.03

–0.01

–1

(–120 V, –0.038 A)

2SB649

(–160 V, –0.02 A)

2SB649A

–3

–10 –30 –100 –300

Collector to emitter voltage VCE (V)

–500

Typical Transfer Characteristics

VCE = –5 V

–100

–10

–1

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base to emitter voltage VBE (V)

Collector to Emitter Saturation

Voltage vs. Collector Current

–1.2

IC = 10 IB

–1.0

–0.8

–0.6

–0.4

–0.2

–0

–1

–25

25

–10

–100

Collector current IC (mA)

–1,000

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

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