2SB1185 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

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fabricante

2SB1185

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1185

DESCRIPTION

·

·With TO-220Fa package

·Low collector saturation votlage

·Complement to type 2SD1762

APPLICATIONS

·For use in low frequency power

amplifer applications

PINNING

PIN

1

2

3

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-base voltage

VCEO

Collector -emitter voltage

VEBO

Emitter-base voltage

IC

Collector current

ICM

Collector current-peak

PC

Collector power dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

Ta=25℃

TC=25℃

VALUE

-60

-50

-5

-3

-4.5

2.0

25

150

-55~150

UNIT

V

V

V

A

A

W

℃

℃

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