2N3859A(1997) Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

fabricante

2N3859A
(Rev.:1997)

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

V(BR)EBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 100 µA, IC = 0

VCB = 18 V, IE = 0

VEB = 4.0 V, IC = 0

ON CHARACTERISTICS*

hFE

DC Current Gain

SMALL SIGNAL CHARACTERISTICS

Cob

fT

rb’Cc

Output Capacitance

Current Gain - Bandwidth Product

Collector - Base Time Constant

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCE = 1.0 V, IC = 1.0 mA

VCE = 1.0 V, IC = 10 mA

VCB = 10 V, f = 1.0 MHz

IC = 2.0 mA, VCE = 10 V

VCE = 10 V, IC = 2.0 mA,

f = 31.9 MHz

60

V

60

V

6.0

V

0.5

µA

0.5

µA

75

100

200

4

pF

90

250

MHz

150

pS

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