2N3716 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2N3716 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N3715/3716
DESCRIPTION
·DC Current Gain-
: hFE= 50-150@IC= 1A
·Wide Area of Safe Operation
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V(Max.)@ IC= 5A
·Complement to Type 2N3791/3792
APPLICATIONS
·Designed for medium-speed switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
2N3715
80
VCBO
Collector-Base Voltage
V
2N3716
100
2N3715
60
VCEO Collector-Emitter Voltage
V
2N3716
80
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current
4
A
PC
Collector Power Dissipation@TC=25℃
150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
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