BC307BG Ver la hoja de datos (PDF) - ON Semiconductor

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BC307BG

Amplifier Transistors

ON Semiconductor 

BC307B, BC307C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0)

Emitter −Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

Collector−Emitter Leakage Current

(VCES = −50 V, VBE = 0)

(VCES = −50 V, VBE = 0) TA = 125°C

ON CHARACTERISTICS

V(BR)CEO

V(BR)EBO

ICES

DC Current Gain

(IC = −10 mAdc, VCE = −5.0 Vdc)

hFE

BC307B

BC307C

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

BC307

BC307B

BC307C

(IC = −100 mAdc, VCE = −5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −10 mAdc, IB = see Note 1)

(IC = −100 mAdc, IB = −5.0 mAdc)

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

(IC = −100 mAdc, IB = −5.0 mAdc)

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)

Common Base Capacitance

(VCB = −10 Vdc, IC = 0, f = 1.0 MHz)

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW,

f = 1.0 kHz)

BC307B

BC307C

VCE(sat)

VBE(sat)

VBE(on)

fT

Ccbo

NF

Min

−45

−5.0

−

−

−

−

120

200

420

−

−

−

−

−

−

−

−0.55

−

−

−

Typ

−

−

−0.2

−0.2

150

270

−

290

500

180

300

−0.10

−0.30

−0.25

−0.7

−1.0

−0.62

280

−

2.0

Max

−

−

−15

−4.0

−

−

800

460

800

−

−

−0.3

−0.6

−

−

−

−0.7

−

6.0

10

1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.

Unit

Vdc

Vdc

nAdc

mA

−

Vdc

Vdc

Vdc

MHz

pF

dB

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2

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