SMP80MC-140(2005) Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante

SMP80MC-140
(Rev.:2005)

TRISIL™ FOR TELECOM EQUIPMENT PROTECTION

STMicroelectronics 

SMP80MC

Figure 8: Variation of thermal impedance

junction to ambient versus pulse duration

(Printed circuit board FR4, SCu=35µm,

recommended pad layout)

Zth(j-a)/Rth(j-a)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-02

1.E-01

tp(s)

1.E+00

1.E+01

1.E+02

1.E+03

Figure 9: Relative variation of junction

capacitance versus reverse voltage applied

(typical values)

C [VR] / C [VR=2V]

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1

10

VR(V)

100

F =1MHz

VOSC = 1VRMS

Tj = 25°C

1000

Figure 10: Test circuit 1 for dynamic IBO and VBO parameters

100 V / µs, di /dt < 10 A / µs, Ipp = 80 A

2Ω

U

10 µF

45 Ω

66 Ω 470 Ω

83 Ω

0.36 nF

46 µH

KeyTek 'System 2' generator with PN246I module

1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A

26 µH

250 Ω

47 Ω

46 µH

U

60 µF

12 Ω

KeyTek 'System 2' generator with PN246I module

5/9

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