datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

BAS116H,135 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
fabricante
BAS116H,135
NXP
NXP Semiconductors. 
BAS116H,135 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Nexperia
BAS116H
Low leakage switching diode
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BAS116H
-
plastic surface-mounted package; 2 leads
Version
SOD123F
4. Marking
Table 4. Marking codes
Type number
BAS116H
Marking code
B1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
IF
forward current
IFRM
repetitive peak forward
current
-
[1][2] -
-
IFSM
non-repetitive peak forward square wave
[3]
current
tp = 1 s
-
tp = 1 ms
-
tp = 1 s
-
Ptot
total power dissipation
Tamb 25 C
[1][4] -
[5]
Max
85
75
215
500
4
1
0.5
375
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
150
65
+150
65
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Pulse test: tp 300 s;   0.02.
[3] Tj = 25 C prior to surge.
[4] Reflow soldering is the only recommended soldering method.
[5] Soldering point of cathode tab.
Unit
V
V
mA
mA
A
A
A
mW
C
C
C
BAS116H
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 May 2011
© Nexperia B.V. 2017. All rights reserved
2 of 10

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]