MAGX-000912-500L0S Ver la hoja de datos (PDF) - M/A-COM Technology Solutions, Inc.

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MAGX-000912-500L0S

GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

M/A-COM Technology Solutions, Inc. 

MAGX-000912-500L0x

GaN on SiC HEMT Pulsed Power Transistor

500 W Peak, 960 to 1215 MHz, 128 μs Pulse, 10% Duty

Rev. V6

Electrical Specifications: Freq. = 960 - 1215 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

PIN

-

5.2

7.9

W

Power Gain

GP

18

19.8

-

dB

Drain Efficiency

Pulse Droop

VDD = 50 V, IDQ = 400 mA,

ηD

51

60

-

%

Pulse Width = 128 μs, Duty Cycle = 10%,

POUT = 500 W Peak (50 W avg.)

Droop

-

0.3

0.6

dB

Load Mismatch Stability

VSWR-S -

3:1

-

-

Load Mismatch Tolerance

VSWR-T -

5:1

-

-

Electrical Characteristics: TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Dynamic Characteristics

VGS = -8 V, VDS = 175 V

VDS = 5 V, ID = 75 mA

VDS = 5 V, ID = 17.5 mA

Input Capacitance

Not applicable - Input matched

Output Capacitance

Reverse Transfer Capacitance

VDS = 50 V, VGS = -8 V,

Freq. = 1 MHz

Symbol Min. Typ. Max. Units

IDS

-

1.0

30

mA

VGS (TH)

-5

-3.1

-2

V

GM

12.5 19.2

-

S

CISS

N/A N/A N/A

pF

COSS

-

55

-

pF

CRSS

-

5.5

-

pF

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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