KSC5502DTTU Ver la hoja de datos (PDF) - Fairchild Semiconductor

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KSC5502DTTU

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Thermal Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

Parameter

PC

RθJC

RθJA

TL

Collector Dissipation (TC = 25°C)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Maximum Lead Temperature for Soldering Purpose:

1/8 inch from Case for 5 seconds

KSC5502D

(D-PAK)

87.83

1.42

111.0

KSC5502DT

(TO-220)

118.16

1.06

62.5

270

Unit

W

°C/W

°C/W

°C

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

BVCBO

BVCEO

BVEBO

ICES

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

Cib

Cob

fT

VF

Parameter

Conditions

Collector-Base Breakdown Voltage IC = 1 mA, IE = 0

Collector-Emitter Breakdown

Voltage

IC = 5 mA, IB = 0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation Voltage

Input Capacitance

Output Capacitance

Current Gain Bandwidth Product

Diode Forward Voltage

IE = 500 μA, IC = 0

VCES = 1200 V, VBE = 0

TC = 25°C

TC = 125°C

VCE = 600 V, IB = 0

TC = 25°C

TC = 125°C

VEB = 12 V, IC = 0

TC = 25°C

VCE = 1 V, IC = 0.2 A

TC = 25°C

TC = 125°C

VCE = 1 V, IC = 1 A

TC = 25°C

TC = 125°C

VCE = 2.5 V,

IC = 0.5 A

TC = 25°C

TC = 125°C

IC = 0.2 A, IB = 0.02 A

TC = 25°C

TC = 125°C

IC = 0.4 A, IB = 0.08 A

TC = 25°C

TC = 125°C

IC = 1 A, IB = 0.2 A

TC = 25°C

TC = 125°C

IC = 0.4 A, IB = 0.08 A

TC = 25°C

TC = 125°C

IC = 1 A, IB = 0.2 A

TC = 25°C

TC = 125°C

VEB = 8 V, IC = 0, f = 1 MHz

VCB = 10 V, IE = 0, f = 1 MHz

IC = 0.5 A,VCE = 10 V

IF = 0.2 A

TC = 25°C

TC = 125°C

IF = 0.4 A

TC = 25°C

TC = 125°C

IF = 1 A

TC = 25°C

Min.

1200

600

12.0

15

8

4.0

3.0

12

6

Typ.

1350

750

13.7

28

18

6.4

4.7

20

12

0.31

0.54

0.15

0.23

0.40

1.30

0.77

0.60

0.83

0.70

385

60

11

0.75

0.59

0.80

0.64

0.90

Max. Unit

V

V

V

100

μA

500

100

μA

500

10 μA

40

30

0.80

1.10

0.60

V

1.00

1.50

3.00

1.00

0.90

V

1.20

1.00

500 pF

100 pF

MHz

1.20

1.30 V

1.50

© 2000 Fairchild Semiconductor Corporation

KSC5502D / KSC5502DT Rev. 1.1.0

2

www.fairchildsemi.com

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