ZXMN6A07Z Ver la hoja de datos (PDF) - Zetex => Diodes

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ZXMN6A07Z

60V SOT89 N-channel enhancement mode mosfet

Zetex => Diodes 

ZXMN6A07Z

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Static

Drain-source breakdown

voltage

V(BR)DSS

Zero gate voltage drain current IDSS

Gate-body leakage

IGSS

Gate-source threshold voltage VGS(th)

Static drain-source on-state

resistance (*)

RDS(on)

Forward transconductance(*)(‡) gfs

Dynamic(‡)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Switching (†) (‡)

Turn-on-delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Total gate charge

Qg

Total gate charge

Qg

Gate-source charge

Qgs

Gate drain charge

Qgd

Source-drain diode

Diode forward voltage(*)

VSD

Reverse recovery time(‡)

trr

Reverse recovery charge(‡)

Qrr

Min.

60

1.0

Typ.

2.3

166

19.5

8.7

1.8

1.4

4.9

2.0

1.65

3.2

0.67

0.82

0.80

20.5

21.3

Max. Unit Conditions

V ID= 250␮A, VGS=0V

1

100

3.0

0.250

0.350

␮A VDS= 60V, VGS=0V

nA VGS=±20V, VDS=0V

V ID= 250␮A, VDS=VGS

⍀ VGS= 10V, ID= 1.8A

⍀ VGS= 4.5V, ID= 1.3A

S VDS= 15V, ID= 1.8A

pF VDS= 40V, VGS=0V

pF f=1MHz

pF

ns VDD= 30V, VGS= 10V

ns ID= 1.8A

ns RG ≈ 6.0⍀

ns

VDS= 30V, VGS= 5V

ID= 1.8A

nC VDS= 30V, VGS= 10V

nC ID= 1.8A

nC

0.95

V Tj=25°C, IS= 0.45A,

VGS=0V

ns Tj=25°C, IF= 1.8A,

nC di/dt=100A/␮s

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Issue 8 - January 2007

4

© Zetex Semiconductors plc 2007

www.zetex.com

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