ZXMN10A09K Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza

componentes Descripción

fabricante

ZXMN10A09K

100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

Zetex => Diodes 

ZXMN10A09K

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-source voltage

Gate-source voltage

Continuous drain current @ VGS=10V; TA=25°C(b)

@ VGS=10V; TA=70°C(b)

@VGS=10V; TA=25°C (a)

Pulsed drain current (c)

Continuous source current (body diode) (b)

Pulsed source current (body diode) (c)

Power dissipation at TA =25°C (a)

Linear derating factor

Power dissipation at TA =25°C (b)

Linear derating factor

Power dissipation at TA =25°C (d)

Linear derating factor

Operating and storage temperature range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

PD

Tj, Tstg

LIMIT

100

±20

7.7

6.2

5

27

11

27

4.3

34.4

10.1

80.8

2.15

17.2

-55 to +150

UNIT

V

V

A

A

A

A

A

A

W

mW/°C

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient (a)

R⍜JA

29

°C/W

Junction to ambient (b)

R⍜JA

12.3

°C/W

Junction to ambient (d)

R⍜JA

58

°C/W

NOTES

(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at t Յ 10 sec.

(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.

(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

SEMICONDUCTORS

ISSUE 6 - JANUARY 2005

2

Share Link: