ZXM64P035G Ver la hoja de datos (PDF) - Zetex => Diodes

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ZXM64P035G

35V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM64P035G

ABSOLUTE MAXIMUM RATING

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (VGS= -10V; TA=25°C)(b)

(VGS= -10V; TA=70°C)(b)

(VGS= -10V; TA=25°C)(a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

-35

Ϯ20

-5.3

-4.3

-3.8

-19

-2.3

-19

2.0

16

3.9

31

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

RθJA

62.5

°C/W

Junction to Ambient (b)

RθJA

32

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.

PROVISIONAL ISSUE A - DECEMBER 2001

2

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