VSKDL450-20S20(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
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VSKDL450-20S20 Datasheet PDF : 8 Pages
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VSKDL450..S20 Series
Vishay High Power Products
Fast Diodes, 460 A
(SUPER MAGN-A-PAKTM Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV) 180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
IF(RMS)
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
Low level value of forward slope resistance
rf1
High level value of forward slope resistance rf2
Maximum forward voltage drop
VFM
180° conduction, half sine wave at TC = 82 °C
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse
VALUES
460
82
720
13.0
13.8
11.1
11.8
845
790
616
578
8450
1.16
1.62
0.68
0.41
2.20
UNITS
A
°C
A
kA
kA2s
kA2√s
V
mΩ
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
CODE
Ipk
trr AT 25 % IRRM
SQUARE
dI/dt
Vr
(µs)
PULSE
(A/µs)
(V)
(A)
S20
2.0
1000
100
- 50
TYPICAL VALUES
AT TJ = 150 °C
trr AT 25 % IRRM Qrr
Ir
(µs)
(µC) (A)
4
400 180
IFM
trr
di
t
dt
Qrr
IRM(REC)
BLOCKING
PARAMETER
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
TEST CONDITIONS
VINS
t=1s
IRRM
TJ = TJ maximum, rated VRRM applied
VALUES
3000
50
UNITS
V
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93165
Revision: 12-Jun-08
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