VIT1060C-E3(2018) Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

fabricante

VIT1060C-E3
(Rev.:2018)

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

IF = 2.5 A

TA = 25 °C

Instantaneous forward voltage per diode (1) IF = 5.0 A

VF

IF = 2.5 A

TA = 125 °C

IF = 5.0 A

Reverse current per diode (2)

TA = 25 °C

VR = 60 V

IR

TA = 125 °C

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TYP.

0.49

0.58

0.39

0.50

-

6.9

MAX.

-

0.70

-

0.60

700

25

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT1060C

VFT1060C

per diode

3.5

6.5

Typical thermal resistance

RJC

per device

2.5

5.0

VBT1060C

3.5

2.5

VIT1060C

3.5

2.5

UNIT

V

μA

mA

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AB

VT1060C-E3/4W

1.87

ITO-220AB

VFT1060C-E3/4W

1.75

TO-263AB

VBT1060C-E3/4W

1.39

TO-263AB

VBT1060CE3/8W

1.39

TO-262AA

VIT1060C-E3/4W

1.45

PACKAGE CODE

4W

4W

4W

8W

4W

BASE QUANTITY

50/tube

50/tube

50/tube

800/reel

50/tube

DELIVERY MODE

Tube

Tube

Tube

Tape and reel

Tube

Revision: 16-Mar-18

2

Document Number: 89131

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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