VIT1045C-M3-4W(2017) Ver la hoja de datos (PDF) - Vishay Semiconductors

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VIT1045C-M3-4W
(Rev.:2017)

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

www.vishay.com

VT1045C, VIT1045C

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

Instantaneous forward voltage per diode

IF = 2.5 A

IF = 5.0 A

IF = 2.5 A

IF = 5.0 A

Reverse current per diode

VR = 45 V

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VF (1)

IR (2)

0.44

0.49

0.34

0.41

-

5

MAX.

-

0.58

-

0.50

500

15

UNIT

V

μA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Typical thermal resistance

per diode

per device

RJC

VT1045C

VIT1045C

3.5

2.5

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N UNIT WEIGHT (g)

TO-220AB

VT1045C-M3/4W

1.87

TO-262AA

VIT1045C-M3/4W

1.45

PACKAGE CODE

4W

4W

BASE QUANTITY

50/tube

50/tube

DELIVERY MODE

Tube

Tube

Revision: 09-Nov-17

2

Document Number: 89348

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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