VG36641641DT-6 Ver la hoja de datos (PDF) - Unspecified
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VG36641641DT-6 Datasheet PDF : 69 Pages
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VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
Pin Function
Symbol
CLK
CKE
/CS
/RAS, /CAS,
/WE
A0 - A13
BA0,BA1
DQM, UDQM ,
LDQM
DQ0 - DQ15
VDD, VSS
VDDQ, VSSQ
Input
Function
Input Maste Clock: Other inputs signals are referenecd to the CLK rising edge
Input
Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals,
device input buffers and output drivers. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-
DOWN (row ACTIVE in any bank).
Chip Select: CS# enables (registered LOW) and disables (registered HIGH) the com-
mand decoder. All commands are masked when CS# is registered HIGH. CS# provides
for external bank selection on systems with multiple banks. CS# is considered part of
the command code.
Input Command Inputs: RAS#, CAS# and WE# (along with CS#) define the command being
entered.
Input
Address Inputs: Provide the row address for ACTIVE commands, and the column
address and AUTO PRECHARGE bit for READ/WRITE commands, to select one loca-
tion out of the memory array in the respective bank.
The row address is specified by A0-A11.
The column address is specified by A0-A9 (X4) / A0-A8 (X8) / A0-A7 (X16)
Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
Input
Address Inputs: Provide the row address for ACTIVE commands (row address A0-
A10), and the column address and AUTO PRECHARGE bit for READ/WRITE com-
mands (column address A0-A7 with A10 defining AUTO PRECHARGE), to select one
location out of the memory array in the respective bank.
I/O Data Input / Output: Data bus
Supply Power Supply for the memory array and peripheral circuitry
Supply Power Supply are supplied to the output buffers only
Document :1G5-0177
Rev.2
Page 4
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