SHF-0289 Ver la hoja de datos (PDF) - Stanford Microdevices
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SHF-0289 Datasheet PDF : 8 Pages
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SHF-0289 DC-3GHz, 1 Watt GaAs HFET
2.45 GHz Application Circuit at 25° C (Vds=8V, Idq=250mA)
Microstrip Segment Specifications
Ref. desig.
Cd2,5
Cd1,3,6,7,8
Cd9
Cd4
Cd10
CM1
CM2
Lbias1
Lbias2
Rstab1
Rstab2
Value Part Number /Style
5.6 pF ROHM MCH18 series
22 pF ROHM MCH18 series
1000 pF ROHM MCH18 series
100 pF ROHM MCH18 series
0.1 uF TANTALUM, size"A", 35 volt
1.5 pF ROHM MCH18 series
1.2 pF ROHM MCH18 series
15 nH TOKO LL1608-FH15NT
15 nH TOKO LL1608-FH15NT
5.1 ohms size 0603
10 ohms size 0603
Ref. desig. Value
Z1
50 ohms, 7.3 deg. @ 2450 MHz
Z2
50 ohms, 12.7 deg. @ 2450 MHz
Z3
50 ohms, 10.3 deg. @ 2450 MHz
Z4
50 ohms, 10.3 deg. @ 2450 MHz
Z5
50 ohms, 15.8 deg. @ 2450 MHz
Z6
50 ohms, 18.9 deg. @ 2450 MHz
Z7
50 ohms, 7.1 deg. @ 2450 MHz
Phase shift functional block between components are
calculated based on wavelength of 2450 MHz signal
on FR4 board material with dielectric constant of 4.1,
microstrip width and height dimensions of W=.054
inch and h= .031 inch.
Test Data @ 2.45 GHz
P1dB(dBm) IP3(dBm) Output tone Level (dBm)
31.0
44.5
15
ς
Ω
Pout vs. Pin T=25oC
40
Drain Efficiency & ID vs. Pout T=25oC
60
510
30
40
430
D ra in E ffic ie n c y
20
10
0
5 10 15 20 25
Pin (dBm)
20
350
ID
0
270
10 15 20 25 30 35
Pout (dBm)
0 S11 & S22 vs. Frequency T=25oC
-5
-10
S22
-15
-20
S11
-25
-30
1.95 2.2 2.45 2.7 2.95
Frequency GHz
1 8 S11 & S22 vs. Frequency T=25oC - 2 6
15
-29
12
S12
-32
9
S21 - 3 5
6
1 .9 5
2.2 2.45 2.7
Frequency GHz
-38
2 .9 5
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
6
http://www.stanfordmicro.com
EDS-101241 Rev A
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